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 SMD SILICON PHOTO DIODES BL-LS1311PD Features: 3.5mmx2.8mm SMD, 1.9mm THICKNESS PLCC2 package, SILICON PHOTO DIODES Choice of various viewing angles. Diffused and Water clear lens are available. Fast response time. High photo sensitivity. Small junction capacitance. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitter. PACKAGE: 2KPCS/REEL. RoHs Compliance
Items
Wavelength of Peak Sensitivity Open Circuit Voltage Short Circuit Current
w
Symbol
P VOC ISC IL ID VBR 21/2 Tr/Tf
Min.
35 -
Reverse Light Current Reverse Dark Current Reverse Break down Voltage Viewing angle Rise/Fall Time
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Electronic Optical Characteristics at Ta=25
Typ.
900 0.40 2 3.5 170 120 6/6
Max.
10 -
Unit
nm V uA uA nA V Deg nS
Condition
H=5mW/cm2 P=900nm H=5mW/cm2 P=900nm VR=5V H=0mW/cm2 VR=10V H=0mW/cm2 IR=100uA RL=1000 VR=10V
Lead Soldering Temperature
TSOL
. w w

Power Dissipation Reverse Voltage Operation Temperature Storage Temperature
Pd VR TOPR TSTG
lu t e b


Applications:
High speed photo detector Camera Infrared remote controller for TVs VCR, audio equipment, air conditioner, etc.
Absolute Maximum Ratings at Ta=25 Parameter Symbol
160 35 -40 to +100 -40 to +100 for 3 sec Max. Max.2605 (1.6mm from the base of the epoxy bulb)
. x
Rating
m o c
Unit mW V
SMD SILICON PHOTO DIODES BL-LS1311PD
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is 0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice.
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Package configuration & Internal circuit diagram
w
. w w
lu t e b
. x
m o c
SMD SILICON PHOTO DIODES BL-LS1311PD
Tape Specifications
w
. w w
lu t e b
. x
m o c
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